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Pricing(USD)
| 1+ | $0.205 |
|---|---|
| 10+ | $0.188 |
| 100+ | $0.171 |
| 1000+ | $0.162 |
| 10000+ | $0.157 |
RQ3E080BNTB
- Part Number:
- RQ3E080BNTB
- Manufacturer:
- ROHM
- Description:
- Trans MOSFET N-CH 30V ±8A 8-Pin HSMT Embossed Tape and Reel
- Number of stock:
- 24000 pcs
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Data sheet:
- 1.RQ3E080BNTB.pdf2.RQ3E080BNTB.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
|---|---|
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | 8-HSMT (3.2x3) |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 15.2 mOhm @ 8A, 10V |
| Power Dissipation (Max): | 2W (Ta) |
| Packaging: | Cut Tape (CT) |
| Package / Case: | 8-PowerVDFN |
| Other Names: | RQ3E080BNTBCT |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 40 Weeks |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 660pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs: | 14.5nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Drain to Source Voltage (Vdss): | 30V |
| Detailed Description: | N-Channel 30V 8A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3) |
| Current - Continuous Drain (Id) @ 25°C: | 8A (Ta) |
| Email: |
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